![]() ![]() The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance. In addition, dV/dt transient immunity of ☑00V/ns over the full temperature range guards against unwanted transistor gate change. With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies. ![]() The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.
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